The activation energy of electromigration in "bamboo" type, passivated Al-1\%Si/TiN/Ti lines was determined by means of high-resolution resistance measurements at wafer level. Both very early stages, with a non linear behaviour of the resistance, and following stages, characterized by an approximately constant rate of resistance change, were analyzed with an existing model that correlates electromigration and mechanical stress evolution. An activation energy could be extracted only in the phase of linear resistance increase, where a value of 0.95eV was found. Diffusion at the interface between Al-Si and the barrier metal or the passivation could be responsible for this value of the activation energy.
Activation Energy of the Early Stages of Electromigration in Al-1%Si/TiN/Ti Bamboo Lines
SCORZONI, Andrea;
1994
Abstract
The activation energy of electromigration in "bamboo" type, passivated Al-1\%Si/TiN/Ti lines was determined by means of high-resolution resistance measurements at wafer level. Both very early stages, with a non linear behaviour of the resistance, and following stages, characterized by an approximately constant rate of resistance change, were analyzed with an existing model that correlates electromigration and mechanical stress evolution. An activation energy could be extracted only in the phase of linear resistance increase, where a value of 0.95eV was found. Diffusion at the interface between Al-Si and the barrier metal or the passivation could be responsible for this value of the activation energy.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
