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Anagrafe della Ricerca dell'Università degli Studi di Perugia.
EnglishA large use of silicon microstrip detectors is foreseen for the intermediate part of the CMS tracker. A specific research and development program has been carried out with the aim of finding design layouts and technological solutions for allowing silicon microstrip detectors to be reliably used on a high radiation level environment. As a result of this work single sided, AC-coupled, polysilicon biased, 300 mu m thick, p(+) on n substrate detectors were chosen. Irradiation tests have been performed on prototypes up to fluence 2 x 10(14) n/cm(2). The detector performances do not significantly change if the detectors are biased well above the depletion voltage. S/N is reduced by less than 20%, still enough to insure a good efficiency and space resolution. Multiguard structures has been developed in order to reach high voltage operation (above 500 V).
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| Titolo: | Test results of heavily irradiated Si detectors |
| Autori: | |
| Data di pubblicazione: | 1999 |
| Rivista: | |
| Abstract: | A large use of silicon microstrip detectors is foreseen for the intermediate part of the CMS tracker. A specific research and development program has been carried out with the aim of finding design layouts and technological solutions for allowing silicon microstrip detectors to be reliably used on a high radiation level environment. As a result of this work single sided, AC-coupled, polysilicon biased, 300 mu m thick, p(+) on n substrate detectors were chosen. Irradiation tests have been performed on prototypes up to fluence 2 x 10(14) n/cm(2). The detector performances do not significantly change if the detectors are biased well above the depletion voltage. S/N is reduced by less than 20%, still enough to insure a good efficiency and space resolution. Multiguard structures has been developed in order to reach high voltage operation (above 500 V). |
| Handle: | http://hdl.handle.net/11391/952590 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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