Radiation damage effects at High Luminosity LHC (HL-LHC) expected fluences and total ionizing doses (TID) will impose very stringent constraints in terms of radiation resistance of silicon detectors. In this work, we address the effects of surface damage on detectors fabricated on p-type substrates by two different foundries. Starting from standard test structure measurements, the interface trap state density and the oxide charge can be extracted for each specific foundry before and after irradiation with X-rays with doses ranging from 0.05 to 100 Mrad(SiO2). These parameters are then used as inputs to the Technology-CAD simulation tools, aiming at evaluating the effects of oxide charge density and interface trap density variation with the dose on MOS capacitor capacitances and interstrip resistances. The good agreement between simulation results and measurements would support the use of the model as a predictive tool to optimize the design and the operation of novel silicon detectors in the HL-LHC scenario.
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