Modeling radiation damage in TCAD

The aim of this work is to develop a TCAD radiation damage model at a device level, enablinga predictive insight on the electrical behaviour of detectors and aiming at their ultimate perfor-mance optimization for the operation at HL-LHC expected fluences (e.g. greater than 2.0×10161 MeV equivalent neutrons/cm2). Our approach aims at keeping the number of fitting parame-ters as low as possible, at the same time accounting for new experimental evidences of relevanteffects at these very high fluences (e.g. charge multiplication and avalanche effects). A physi-cally grounded approach is being pursued, aiming at devising a not over-specific modelling whilekeeping predictive capabilities on the device behavior fabricated by different vendors (e.g. withdifferent technology flavors) and in different operating conditions, e.g. at different fluences, tem-peratures and biasing voltages. The model development follows a test campaign with a twofoldgoal: from one hand, the relevant technology parameters such as oxide charge and interface trapstates as a function of the irradiation dose have been measured. On the other hand, DC and ACmeasurements on gate-controlled diodes and MOS capacitors can be used as reference for TCADsimulation models validation purpose. The complete bulk and surface radiation damage modelcan be exploited for the analysis of the active behavior of different classes of new generationdetectors to be used in the future HEP experiments.