A new development of radiation -resistant silicon sensors is presented. The new sensors exploit the Low -Gain Avalanche Diode (LGAD) technology, with internal multiplication of the charge carriers, in combination with thin substrates, intrinsically less affected by radiation. An innovative design of the gain implant typical of the LGADs has been developed and fabricated, employing the compensation of acceptor and donor dopants to reproduce the effective acceptor doping dose of standard LGAD sensors. At the end of 2022, the Fondazione Bruno Kessler (Italy) delivered the first batch of compensated LGAD sensors on 30 mu m thick p -type epitaxial substrates. Electrical and transient characterisation of the sensors has been performed before and after irradiation up to 5 .10 15 1 MeV equivalent n/cm 2 . The ultimate goal is to develop and produce compensated LGAD sensors that can efficiently operate above fluences of 10 17 1 MeV equivalent n/cm 2 .
The first batch of compensated LGAD sensors
Morozzi, A.;Croci, T.;Fondacci, A.;Moscatelli, F.;Passeri, D.;
2024
Abstract
A new development of radiation -resistant silicon sensors is presented. The new sensors exploit the Low -Gain Avalanche Diode (LGAD) technology, with internal multiplication of the charge carriers, in combination with thin substrates, intrinsically less affected by radiation. An innovative design of the gain implant typical of the LGADs has been developed and fabricated, employing the compensation of acceptor and donor dopants to reproduce the effective acceptor doping dose of standard LGAD sensors. At the end of 2022, the Fondazione Bruno Kessler (Italy) delivered the first batch of compensated LGAD sensors on 30 mu m thick p -type epitaxial substrates. Electrical and transient characterisation of the sensors has been performed before and after irradiation up to 5 .10 15 1 MeV equivalent n/cm 2 . The ultimate goal is to develop and produce compensated LGAD sensors that can efficiently operate above fluences of 10 17 1 MeV equivalent n/cm 2 .I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
