Sfoglia per Autore
Methods for Contact Resistance Measurements: Applications to (n+, p+)Si/Al-1%Si Ohmic Contacts
1984 Scorzoni, Andrea; Finetti, M.; Soncini, G.
Lateral Current Crowding Effects on Contact Resistance Measurements in Four Terminal Resistor Test Patterns
1984 Finetti, M.; Scorzoni, Andrea; Soncini, G.
Leghe Metalliche Amorfe in Schemi di Metallizzazione per Dispositivi Elettronici al Silicio
1984 Celotti, G.; Finetti, M.; Guerri, S.; Nipoti, R.; Scorzoni, Andrea
Contact Resistivity Measurements on n+ (and p+)Si/Pd(Ni, Ti and Ta) Silicide Structures
1984 Finetti, M.; Guerri, S.; Negrini, P.; Scorzoni, Andrea; Suni, I.
Contact resistivity of silicon/silicide structures formed by thin film reactions
1985 Finetti, M.; Guerri, S.; Negrini, P.; Scorzoni, Andrea; Suni, I.
Ion-implanted, electron-beam annealed TiN films as diffusion barriers for Al on Si shallow junctions
1985 Armigliato, A.; Finetti, M.; Garrido, J.; Guerri, S.; Ostoja, P.; Scorzoni, Andrea
Electrical Characterization of Ion Implanted, Thermally Annealed TiN Films Acting as Diffusion Barriers on Shallow Junction Silicon Devices
1985 Armigliato, A.; Finetti, M.; Gabilli, E.; Guerri, S.; Ostoja, P.; Sabato, G.; Scorzoni, Andrea
A further comment on "Determining specific contact resistivity from contact end resistance measurements"
1985 Finetti, M.; Scorzoni, Andrea; Soncini, G.
Ion Implanted TiN Films Acting as Diffusion Barriers on As+ Doped Silicon Shallow Junctions
1985 Armigliato, A.; Finetti, M.; Guerri, S.; Scorzoni, Andrea; Sabato, G.
Electron microscopy observations of N2+ -implanted TiN films as diffusion barriers for very-large-scale integration applications
1986 Armigliato, A.; Finetti, M.; Guerri, S.; Ostoja, P.; Scorzoni, Andrea; Garrido, J.
Increase in Barrier Height of Al/n-GaAs Contacts Induced by High Current
1986 Canali, C.; Umena, L.; Fantini, F.; Scorzoni, Andrea; Zanoni, E.
Evaluation of Current Density Distribution in Mesfet Gates
1986 Scorzoni, Andrea; Canali, C.; Fantini, F.; Zanoni, E.
Correlation Between Resistance Behaviour and Mass Transport in Al-Si/Ti Multilayer Interconnects
1986 Finetti, M.; Suni, I.; Scorzoni, Andrea; Soncini, G.
Ohmic Contact Resistivity and Resistance Evaluation
1986 Scorzoni, Andrea; Finetti, M.; Soncini, G.; Suni, I.; Cappelletti, P.
Electrical Properties of Silicided Contacts
1987 Finetti, M.; Scorzoni, Andrea; Suni, I.
Degradation Mechanisms Induced by High Current Density in Al-gate GaAs MESFETs
1987 Canalii, C.; Fantini, F.; Scorzoni, Andrea; Umena, L.; Zanoni, E.
Current crowding and misalignment effects as sources of error in contact resistivity measurements. Part I: Computer simulation of conventional CER and CKR structures
1987 Scorzoni, Andrea; Finetti, M.; Grahn, K.; Suni, I.; Cappelletti, P.
Electrical and Structural Characterization of Electromigration in Al-Si/Ti Multilayer Interconnects
1987 Finetti, M.; Scorzoni, Andrea; Armigliato, A.; Garulli, A.; Suni, I.
Ohmic Contact Resistance Evaluation in Silicon Planar Structures: Application to the CoSi/n+ Si Interface
1987 Scorzoni, Andrea; Finetti, M.; Soncini, G.; Suni, I.
Current crowding and misalignment effects as sources of error in contact resistivity measurements. Part II: Experimental results and computer simulation of self-aligned test structures
1987 Cappelletti, P.; Finetti, M.; Scorzoni, Andrea; Suni, I.; Circelli, N.; Dalla Libera, G.
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